| PART |
Description |
Maker |
| L3G3IS L3G3ISTR |
MEMS motion sensor: three-axis digital output gyroscope for optical image stabilization
|
ST Microelectronics
|
| D6F-PH5050AD3 |
MEMS Differential Pressure Sensor
High Impedance MEMS Mass Flow Technology
|
Omron Electronics LLC
|
| IM810D IM810C IM810B |
MEMS Technology
MEMS Oscillator, Ultra Performance, LVCMOS/HCMOS Compatible, 1.00 MHz to 80.00 MHz
|
ILSI America LLC
MMD Components
|
| 1503 1503J 1503-100A 1503-100B 1503-100C 1503-120B |
Max delay 35 ns, Mechanically variable delay line
Max delay 250 ns, Mechanically variable delay line
Max delay 150 ns, Mechanically variable delay line
Max delay 130 ns, Mechanically variable delay line
Max delay 80 ns, Mechanically variable delay line
Max delay 60 ns, Mechanically variable delay line
Max delay 50 ns, Mechanically variable delay line
Max delay 40 ns, Mechanically variable delay line
Max delay 30 ns, Mechanically variable delay line
Max delay 25 ns, Mechanically variable delay line
Max delay 20 ns, Mechanically variable delay line
Max delay 200 ns, Mechanically variable delay line
Max delay 160 ns, Mechanically variable delay line
Max delay 15 ns, Mechanically variable delay line
Max delay 140 ns, Mechanically variable delay line
Max delay 120 ns, Mechanically variable delay line
Max delay 100 ns, Mechanically variable delay line
Mechanically variable passive delay line
|
Data Delay Devices Inc
|
| MPAT-02000220-3706 MPAT-10701250-6020 MPAT-0750085 |
2000 MHz - 2200 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.7 dB INSERTION LOSS-MAX
10700 MHz - 12500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
7500 MHz - 8500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.8 dB INSERTION LOSS-MAX
7900 MHz - 8400 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
7250 MHz - 7750 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
2100 MHz - 2700 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.5 dB INSERTION LOSS-MAX
17700 MHz - 20200 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3 dB INSERTION LOSS-MAX
17300 MHz - 18100 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3 dB INSERTION LOSS-MAX
12750 MHz - 13250 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
5845 MHz - 6430 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
|
MITEQ, Inc.
|
| MV1402-5MCHIP MV1401B-4M MV1405B-2M MV1403-6MCHIP |
360 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
550 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-14
250 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
175 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
100 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
120 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
|
|
| LIS3L02AS5TR LIS3L02AS5 |
MEMS INERTIAL SENSOR: 3-axis - g/6g LINEAR ACCELEROMETER MEMS惯性传感器3 g/6g线性加速度
MEMS INERTIAL SENSOR: 3-axis - 【2g/6g LINEAR ACCELEROMETER
MEMS INERTIAL SENSOR: 3-axis - ±2g/6g LINEAR ACCELEROMETER
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| B561-8I-10 B221-8I-10 B331-8I-10 B101-8I-10 B151-8 |
UNSHIELDED, 0.4 uH - 0.56 uH, VARIABLE INDUCTOR
UNSHIELDED, 0.16 uH - 0.22 uH, VARIABLE INDUCTOR
UNSHIELDED, 0.24 uH - 0.33 uH, VARIABLE INDUCTOR
UNSHIELDED, 0.07 uH - 0.1 uH, VARIABLE INDUCTOR
UNSHIELDED, 0.11 uH - 0.15 uH, VARIABLE INDUCTOR
UNSHIELDED, 0.054 uH - 0.076 uH, VARIABLE INDUCTOR
UNSHIELDED, 0.02 uH - 0.025 uH, VARIABLE INDUCTOR
|
Data Device, Corp.
ITT Interconnect Solutions
|
| F600BNS-8031Z F600GNS-8065Z F600BNS-8032Z F600BNS- |
Variable Coils UNSHIELDED, VARIABLE INDUCTOR
|
TOKO Inc.
TOKO, Inc.
|
| CLI850 CLI870 CLI860 CLI840 |
100 mA, optical switch
OPTICAL SWITCHES
|
Clairex Technologies
ETC[ETC]
List of Unclassifed Manufacturers
|
| 165-05A06S 164-04A06 165-04A06S |
NOT RoHS. RF inductor, tunable, aluminum core, shielded (add 'L' for compliant version) SHIELDED, 0.043 uH - 0.05 uH, VARIABLE INDUCTOR
UNSHIELDED, 0.052 uH - 0.077 uH, VARIABLE INDUCTOR
SHIELDED, 0.035 uH - 0.041 uH, VARIABLE INDUCTOR
|
Coilcraft, Inc.
COILCRAFT INC
|
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